1 www.fairchildsemi.com ? 2006 fairchild semiconductor corporation fqp13n50cf / FQPF13N50CF rev. c0 fqp13n50cf / FQPF13N50CF n-channel mosfet absolute maximum ratings *drain current limited by maximum junction temperature thermal characteristics to-220 g s d d g s to-220f gs d symbol parameter fqp13n50cf FQPF13N50CF unit v dss drain-source voltage 500 v i d drain current - continuous (t c = 25 c) 13 13* a - continuous (t c = 100 c) 88* a i dm drain current - pulsed (note 1) 52 52* a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 530 mj i ar avalanche current (note 1) 13 a e ar repetitive avalanche energy (note 1) 19.5 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 c) 195 48 w - derate above 25 c1 . 5 60 . 3 9 w / c t j, t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 c symbol parameter fqp13n50cf FQPF13N50CF unit r jc thermal resistance, junction-to-case 0.64 2.58 c/w r ja thermal resistance, junction-to-ambient 62.5 62.5 c/w ? ? ? 100% a valanche t ested ? ? fast recovery body diode (typ. 100 ns) this n-channel enhancement mode power mosfet is produced using fairchild semiconductor ? s proprietary planar stripe and dmos technology. this advanced mosfet technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. these devices are suitable for switched mode power supplies, active power factor correction (pfc), and electronic lamp ballasts. march 2013 fqp13n50cf / FQPF13N50CF n-channel qf e t ? frfet ? mosfet 500 v, 13 a, 540 m? description features 13 a, 500 v, r ds(on) = 540 m(max.) @v gs = 10 v, i d = 6.5 a low gate charge (typ. 43 nc) low c rss (typ. 20 pf)
2 fqp13n50cf / FQPF13N50CF n-channel mosfet package marking and ordering information electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating: pulse width limit ed by maximum junction temperature 2. l = 5.6mh, i as = 13a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 13a, di/dt 200a/ s, v dd bv dss, starting t j = 25c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics device marking device package reel size tape width quantity fqp13n50cf fqp13n50cf to-220 - - 50 FQPF13N50CF FQPF13N50CF to-220f - - 50 symbol parameter conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250 a, t j = 25 c 500 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c- -0 . 5- -v / c i dss zero gate voltage drain current v ds = 500v, v gs = 0v -- -- 10 a v ds = 400v, t c = 125 c -- -- 100 a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a2 . 0 - - 4 . 0 v r ds(on) static drain-source on-resistance v gs = 10v, i d = 6.5a -- 0.43 0.54 ? g fs forward transconductance v ds = 40v, i d = 6.5a (note 4) -- 15 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 1580 2055 pf c oss output capacitance -- 180 235 pf c rss reverse transfer capacitance -- 20 25 pf switching characteristics t d(on) turn-on delay time v dd = 250v, i d = 13a r g = 25 ? (note 4, 5) -- 25 60 ns t r turn-on rise time -- 100 210 ns t d(off) turn-off delay time -- 130 270 ns t f turn-off fall time -- 100 210 ns q g total gate charge v ds = 400v, i d = 13a v gs = 10v (note 4, 5) -- 43 56 nc q gs gate-source charge -- 7.5 -- nc q gd gate-drain charge -- 18.5 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 13 a i sm maximum pulsed drain-source diode forward current -- -- 52 a v sd drain-source diode forward voltage v gs = 0v, i s = 13a -- -- 1.4 v t rr reverse recovery time v gs = 0v, i s = 13a di f /dt =100a/ s (note 4) -- 100 160 ns q rr reverse recovery charge -- 0.35 -- c www.fairchildsemi.com ? 2006 fairchild semiconductor corporation fqp13n50cf / FQPF13N50CF rev. c0
3 fqp13n50cf / FQPF13N50CF n-channel mosfet typical performance characteristics figure 1. on-region characteristics f igure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage v ariation vs. s ource current and temperatue figure 5. capacitance characteristics f igure 6. gate charge characteristics 10 -1 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v notes : ? 1. 250 s pulse test 2. t c = 25 ? i d , drain current [a] v ds , drain-source voltage [v] 24681 0 10 -1 10 0 10 1 150 o c 25 o c -55 o c notes : ? 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 ? notes : ? 1. v gs = 0v 2 . 250 s pulse test 25 ? i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 5 10 15 20 25 30 35 0.5 1.0 1.5 v gs = 20v v gs = 10v note : t ? j = 25 ? r ds(on) [? ], drain-source on-resistance i d , drain current [a] 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 3000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; ? 1. v gs = 0 v 2 . f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 1 02 03 04 05 0 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 400v note : i ? d = 13a v gs , gate-source voltage [v] q g , total gate charge [nc] www.fairchildsemi.com ? 2006 fairchild semiconductor corporation fqp13n50cf / FQPF13N50CF rev. c0
4 fqp13n50cf / FQPF13N50CF n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9-1. maximum safe operating area figure 9-2. maximum safe operating area for fqp13n50cf for FQPF13N50CF figure 10. maximum drain current vs. case temperature -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : ? 1. v gs = 10 v 2. i d = 6.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 not es : ? 1. v gs = 0 v 2 . i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 3 dc 100ms 10ms 1ms 100 s 10 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. singl e pulse i d , drain current [a] v ds , drain-sourcevoltage[v] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 3 dc 100ms 10ms 1ms 100 s 10 s operation in this area is limited by r ds(on) * notes : 1 . t c = 25 o c 2 . t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-sourcevoltage[v] 25 50 75 100 125 150 0 2 4 6 8 10 12 14 i d , drain current [a] t c , case temperature [ ] ? www.fairchildsemi.com ? 2006 fairchild semiconductor corporation fqp13n50cf / FQPF13N50CF rev. c0
5 fqp13n50cf / FQPF13N50CF n-channel mosfet typical performance characteristics (continued) figure 11-1. transient thermal response curve for fqp13n50cf figure 11-2. transient thermal response curve for FQPF13N50CF 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : ? 1. z jc (t) = 0.64 /w max. ? 2. d uty factor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 n otes : ? 1. z jc (t) = 2.58 /w m ax. ? 2. d uty factor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) sing le p ulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2 www.fairchildsemi.com ? 2006 fairchild semiconductor corporation fqp13n50cf / FQPF13N50CF rev. c0
6 fqp13n50cf / FQPF13N50CF 500v n-channel mosfet gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms www.fairchildsemi.com ? 2006 fairchild semiconductor corporation fqp13n50cf / FQPF13N50CF rev. c0
7 fqp13n50cf / FQPF13N50CF 500v n-channel mosfet peak diode recovery dv/dt test circuit & waveforms www.fairchildsemi.com ? 2006 fairchild semiconductor corporation fqp13n50cf / FQPF13N50CF rev. c0
8 fqp13n50cf / FQPF13N50CF 500v n-channel mosfet www.fairchildsemi.com ? 2006 fairchild semiconductor corporation fqp13n50cf / FQPF13N50CF rev. c0 dimensions in millimeters mechanical dimensions to-220
9 fqp13n50cf / FQPF13N50CF 500v n-channel mosfet www.fairchildsemi.com ? 2006 fairchild semiconductor corporation fqp13n50cf / FQPF13N50CF rev. c0 mechanical dimensions dimensions in millimeters to-220 f
10 fqp13n50cf / FQPF13N50CF 500v n-channel mosfet www.fairchildsemi.com ? 2006 fairchild semiconductor corporation fqp13n50cf / FQPF13N50CF rev. c0 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. * trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions , specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a sign ificant injury of the user. 2. a critical component in any com ponent of a life su pport, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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